Capture of photoexcited carriers by a laser structure
- 18 December 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (25), 2646-2648
- https://doi.org/10.1063/1.101962
Abstract
The capture of photoexcited carriers in different laser structures is investigated by subpicosecond luminescence spectroscopy. The capture time at 20 and 80 K is monitored by the decay of the luminescence of the confinement layers. It is found to range between 2 and 3 ps for both linear and parabolic grading, and to be much longer in nongraded structures. The improvement of the capture in the case of graded structures is due to the quasi-electric field experienced by the carriers, and might allow the devices to run at much higher frequencies.Keywords
This publication has 12 references indexed in Scilit:
- Model calculations of diffusion limited trapping dynamics in quantum well laser structuresApplied Physics A, 1989
- Dynamics of carrier capture in an InGaAs/GaAs quantum well trapApplied Physics Letters, 1989
- Trapping of carriers in single quantum wells with different configurations of the confinement layersPhysical Review B, 1988
- Capture of electrons and holes in quantum wellsApplied Physics Letters, 1988
- Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopyPhysical Review Letters, 1987
- Carrier trapping in single quantum wells with different confinement structuresApplied Physics Letters, 1987
- Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopyPhysical Review Letters, 1987
- Effective-mass eigenfunctions in superlattices and their role in well-captureSuperlattices and Microstructures, 1986
- Resonant carrier capture by semiconductor quantum wellsPhysical Review B, 1986
- A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beamApplied Physics Letters, 1981