(SN)x-GaAs polymer-semiconductor solar cells
- 1 November 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (9), 812-814
- https://doi.org/10.1063/1.90537
Abstract
We report the first solar cell whose junction is formed by a polymer‐semiconductor interface. Open‐circuit voltages, Voc≳0.7 V, have been observed on cells consisting of a thin film of polymeric sulfur‐nitride, (SN)x, deposited on GaAs. This is an enhancement of more than 40% over the Voc commonly measured with metal‐GaAs solar cells. Initial efforts have resulted in efficiencies ≳6% without antireflection coatings.Keywords
This publication has 12 references indexed in Scilit:
- Simplified fabrication of GaAs homojunction solar cells with increased conversion efficienciesApplied Physics Letters, 1978
- Barrier height modification in silicon Schottky (MIS) solar cellsIEEE Transactions on Electron Devices, 1977
- Technology of GaAs metal—Oxide—Semiconductor solar cellsIEEE Transactions on Electron Devices, 1977
- Band structure of polymeric sulfur nitrideSolid State Communications, 1976
- HgSe, a highly electronegative stable metallic contact for semiconductor devicesApplied Physics Letters, 1976
- Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitrideApplied Physics Letters, 1976
- Electrical conductivity of (SN)xSolid State Communications, 1976
- Epitaxial crystalline films of the metallic polymer (SN)xApplied Physics Letters, 1975
- Ga[sub 1−x]Al[sub x]As-GaAs P-P-N Heterojunction Solar CellsJournal of the Electrochemical Society, 1973
- Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy ConversionJournal of Applied Physics, 1956