Irradiation defects and the electrical quality of ion implanted silicon
- 31 October 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (10), 975-983
- https://doi.org/10.1016/0038-1101(71)90166-3
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- MINORITY CARRIER LIFETIME IN ION-IMPLANTED AND ANNEALED SILICONApplied Physics Letters, 1970
- THE LATTICE LOCATION OF BORON IONS IMPLANTED INTO SILICONApplied Physics Letters, 1970
- The implanted profiles of boron, phosphorus and arsenic in silicon from junction depth measurementsSolid-State Electronics, 1970
- The Role of Damage in the Annealing Characteristics of Ion Implanted SiJournal of the Electrochemical Society, 1970
- PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200-keV BORON IONSApplied Physics Letters, 1969
- POST ANNEALING CONDUCTANCE BEHAVIOR OF IMPLANTED LAYERS IN SILICONApplied Physics Letters, 1969
- Observation of ion bombardment damage in siliconPhilosophical Magazine, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967