Electron traps created by high temperature annealing in MBE n-GaAs
- 1 May 1981
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 10 (3), 445-453
- https://doi.org/10.1007/bf02654584
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- A correlation between electron traps and growth processes in n-GaAs prepared by molecular beam epitaxyApplied Physics Letters, 1980
- Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAsElectronics Letters, 1980
- Deep level transient spectroscopy for diodes with large leakage currentsReview of Scientific Instruments, 1979
- Current injection GaAs-AlxGa1−xAs multi-quantum-well heterostructure lasers prepared by molecular beam epitaxyApplied Physics Letters, 1979
- R.F. plasma deposition of silicon nitride layersThin Solid Films, 1978
- Nonalloyed Ohmic contacts to n-GaAs by molecular beam epitaxyApplied Physics Letters, 1978
- Study of Encapsulants for Annealing GaAsJournal of the Electrochemical Society, 1977
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- Study of electron traps in n-GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1976
- GaAs MESFET prepared by molecular beam epitaxy (MBE)Applied Physics Letters, 1976