Atomic structure at the (111) Si-SiO2 interface

Abstract

The structure and stoichiometry at the (111) Si‐SiO₂ interface has been studied by ion backscattering channeling methods. In qualitative agreement with other oxide covered Si surfaces studied by this technique, we find the oxide to be stoichiometric to approximately one monolayer of the interface and a thin region (1–2 monolayers) of distorted Si crystal. Further measurements were carried out to evaluate the magnitude and direction of the Si atomic displacements at the interface.