Short-wavelength InGaAlP visible laser diodes
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 27 (6), 1476-1482
- https://doi.org/10.1109/3.89966
Abstract
No abstract availableThis publication has 37 references indexed in Scilit:
- 633 nm CW operation of GaInP/AlGaInP laser-diodesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- 636 nm room temperature CW operation by heterobarrier blocking structure InGaAlP laser diodesElectronics Letters, 1990
- Room-temperature continuous-wave operation of short-wavelength GaInP/AlGaInP laser grown on (511)A GaAs substrate by metalorganic vapour phase epitaxyElectronics Letters, 1989
- Lasing wavelengths of index-guided AlGaInP semiconductor lasers as functions of off-angle from (100) plane of GaAs substrateElectronics Letters, 1989
- Short-wavelength (≲6400 Å) room-temperature continuous operation of p-n In0.5(AlxGa1−x)0.5P quantum well lasersApplied Physics Letters, 1988
- Effect of facet coating on the reliability of InGaAlP visible light laser diodesApplied Physics Letters, 1988
- GaInP/AlGaInP double-heterostructure laser grown on a (111)B-oriented GaAs substrate by metalorganic chemical vapour depositionElectronics Letters, 1988
- Room-temperature, continuous-wave operation for mode-stabilised AlGaInP visible-light semiconductor laser with a multiquantum-well active layerElectronics Letters, 1988
- High-temperature CW operation of visible light-emitting GaInP/AlGaInP inner stripe laser diodesElectronics Letters, 1988
- Room-temperature continuous-wave operation of a GaInP/AlGaInP multiquantum well laser grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987