Atomic layer epitaxy of GaP and elucidation for self-limiting mechanism
- 26 February 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (9), 827-829
- https://doi.org/10.1063/1.102675
Abstract
Atomic layer epitaxy (ALE) of GaP was performed for the first time in a low‐pressure metalorganic vapor phase epitaxial (MOVPE) reactor using trimethylgallium (TMG) and phosphine (PH3) as sources. Growth was self‐limiting for the exposure time of each reactant. X‐ray photoelectron spectroscopy (XPS) analyses were carried out to identify the adsorbates on the growth surface. There were no methyl groups on the surface Ga and the self‐limiting mechanism is due to the selective adsorption of TMG by the surface P atoms. When the substrate was exposed to a sufficient TMG flow after a submonolayer Ga was deposited by triethylgallium (TEG), growth was still self‐limiting. This supports the selective adsorption model.Keywords
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