High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy
- 3 October 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (14), 1248-1250
- https://doi.org/10.1063/1.99992
Abstract
A high‐peak‐power low‐threshold AlGaAs/GaAs double‐heterostructure stripe laser diode on Si substrates grown by hybrid migration‐enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double‐heterostructure stripe laser diodes on Si substrates, room‐temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30% without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/cm2 when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.Keywords
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