Reduction of surface defects in GaAs grown by molecular beam epitaxy
- 26 October 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (17), 1340-1342
- https://doi.org/10.1063/1.98672
Abstract
A method to reduce the density of oval defects originating from pregrowth surface particulates and other contaminants for GaAs layers grown by molecular beam epitaxy (MBE) is presented. It appears that if a thin GaAs buffer layer is deposited by alternately supplying Ga atoms and As4 molecules to a GaAs substrate, prior to further growth by MBE, the density of the oval defects in the final layer is reduced reproducibly by a factor of 7, from about 490 to 70 cm−2, when compared with that obtained using MBE alone under closely similar conditions. The improved surface morphology produced by the pulsed beam method is thought to be related to initial film growth which proceeds likely in a two-dimensional layer-by-layer fashion.Keywords
This publication has 19 references indexed in Scilit:
- Classification and origins of GaAs oval defects grown by molecular beam epitaxyJournal of Crystal Growth, 1987
- On the Origin of Oval Defect with Nucleus on Epilayers Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1986
- Classification of Surface Defects on GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1986
- GaAs Substrate Preparation for Oval-Defect Elimination during MBE GrowthJapanese Journal of Applied Physics, 1986
- Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxyApplied Physics Letters, 1986
- Surface morphologies of GaAs layers grown by arsenic-pressure-controlled molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Origin of oval defects in GaAs layers grown by molecular beam epitaxyJournal of Crystal Growth, 1985
- Particulates: An origin of GaAs oval defects grown by molecular beam epitaxyApplied Physics Letters, 1985
- Microtwinning and growth defects in GaAs MBE layersJournal of Crystal Growth, 1982
- Source and elimination of oval defects on GaAs films grown by molecular beam epitaxyApplied Physics Letters, 1981