Magnetic field studies of elastic scattering and optic-phonon emission in resonant-tunneling devices
- 15 February 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (5), 3438-3441
- https://doi.org/10.1103/physrevb.39.3438
Abstract
The current-voltage characteristics of a series of double-barrier structures based on -type GaAs/(Al,Ga)As are investigated in the presence of a quantizing magnetic-field perpendicular to the barriers. Landau-level structure arising from elastic scattering and LO-phonon-assisted tunneling into the quantum well is clearly resolved. For well widths less than 6 nm, emission processes involving both the AlAs- and GaAs-like LO-phonon modes of the (Al,Ga)As barrier are observed.
Keywords
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