0.67 µm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE
- 1 September 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (9A), L740-742
- https://doi.org/10.1143/jjap.23.l740
Abstract
Room temperature pulsed operation of 0.67 µm wavelength GaInAsP/AlGaAs lasers on GaAs was achieved, where the lattice constant of GaInAsP active layer neraly matched those of the Al0.6Ga0.4As cladding layers. The threshold current density Jth of the device was 8 kA/cm2.Keywords
This publication has 10 references indexed in Scilit:
- Low-threshold InGaAsP/InGaP lasers at 810 nm grown on GaAs substrate by LPEElectronics Letters, 1984
- LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution TechniqueJapanese Journal of Applied Physics, 1984
- Continuously operated visible-light-emitting lasers using liquid-phase-epitaxial InGaPAs grown on GaAs substratesApplied Physics Letters, 1983
- 0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBEElectronics Letters, 1983
- Very Short Wavelength (621.4 nm) Room Temperature Pulsed Operation of InGaAsP LasersJapanese Journal of Applied Physics, 1982
- Lattice-Matched LPE Growth of In1-xGaxP1-yAsyLayers on (100) GaAs SubstratesJapanese Journal of Applied Physics, 1980
- Degradation mechanisms of Ga1−xAlxAs visible diode lasersJournal of Applied Physics, 1980
- Continuous operation of visible-spectrum in1-xGaxP1-zAszlaser diodes (6280 Å, 77 K)IEEE Journal of Quantum Electronics, 1978
- Visible GaAs0.7P0.3 cw heterojunction lasersApplied Physics Letters, 1977
- Pulsed room-temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV)Applied Physics Letters, 1976