Direct delineation of fine metallic patterns through hydrogen reduction of the inorganic resist HPA
- 30 September 1991
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 14 (3-4), 149-158
- https://doi.org/10.1016/0167-9317(91)90001-t
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Electron Beam Direct Writing Technology for 64-Mb DRAM LSIsJapanese Journal of Applied Physics, 1990
- Tungsten metal film formed by spin-coating amorphous peroxopolytungstic acidApplied Physics Letters, 1989
- Excimer Laser Exposure Characteristics Of Inorganic Resists Based On Peroxo-Polytungstic AcidsPublished by SPIE-Intl Soc Optical Eng ,1989
- Spin‐Coatable Inorganic Resists Based on Novel Peroxopolyniobotungstic Acids for Bilayer LithographyJournal of the Electrochemical Society, 1987
- Mechanism of a High-Contrast Inorganic Ion Resist Using Amorphous WO3Japanese Journal of Applied Physics, 1986
- Peroxypolytungstic acids: A new inorganic resist materialApplied Physics Letters, 1986
- Germanium selenide: A resist for low-energy ion beam lithographyJournal of Vacuum Science and Technology, 1981