Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures (Lz∽50Å, E1-1' -2× h̵ωLO⪅h̵ωL)

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30 September 1979

journal article
Published by Elsevier in Solid State Communications

Vol. 31 (12), 1033-1037
https://doi.org/10.1016/0038-1098(79)90026-7

Abstract

No abstract available

This publication has 13 references indexed in Scilit:

Phonon-sideband MO-CVD quantum-well AlxGa1−xAs-GaAs heterostructure laser
Applied Physics Letters, 1979
Preparation and properties of Ga1-xAlxAs-GaAs heterostructure lasers grown by metalorganic chemical vapor deposition
IEEE Journal of Quantum Electronics, 1979
Low-threshold continuous laser operation (300–337 °K) of multilayer MO-CVD AlxGa1−xAs-GaAs quantum-well heterostructures
Applied Physics Letters, 1978
Carrier collection in a semiconductor quantum well
Solid State Communications, 1978
Determination of the indirect band edge of GaAs by quantum-well bandfilling (Lz∼100Å)
Solid State Communications, 1978
Room-temperature continuous operation of photopumped MO-CVD AlxGa1−xAs-GaAs-AlxGa1−xAs quantum-well lasers
Applied Physics Letters, 1978
Electron-hole plasma in direct-gap semiconductors with low polar coupling: GaAs, InP, and GaSb
Physical Review B, 1978
Very low threshold Ga(1−x)AlxAs-GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1978
Room-temperature operation of Ga(1−x)AlxAs/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1977
High-efficiency GaAlAs/GaAs heterostructure solar cells grown by metalorganic chemical vapor deposition
Applied Physics Letters, 1977

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