The effects of (NH4)2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectors
- 30 April 2003
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 251 (1-4), 782-786
- https://doi.org/10.1016/s0022-0248(02)02369-2
Abstract
No abstract availableKeywords
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