Reproducible resistance switching characteristics of pulsed laserdeposited polycrystalline Nb2O5
- 17 June 2005
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 80, 260-263
- https://doi.org/10.1016/j.mee.2005.04.012
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Reproducible resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2004
- Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti∕Pr0.7Ca0.3MnO3 interfaceApplied Physics Letters, 2004
- Field-induced resistive switching in metal-oxide interfacesApplied Physics Letters, 2004
- Novel colossal magnetoresistive thin film nonvolatile resistance random access memory (RRAM)Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Electrical current distribution across a metal–insulator–metal structure during bistable switchingJournal of Applied Physics, 2001
- Electric-pulse-induced reversible resistance change effect in magnetoresistive filmsApplied Physics Letters, 2000
- Switching behavior of epitaxial perovskite manganite thin filmsApplied Physics Letters, 1999
- Electrical phenomena in amorphous oxide filmsReports on Progress in Physics, 1970
- Switching phenomena in titanium oxide thin filmsSolid-State Electronics, 1968
- BISTABLE SWITCHING IN NIOBIUM OXIDE DIODESApplied Physics Letters, 1965