Rapid isothermal annealing of boron ion implanted junctions

Abstract

The minimum annealing time for complete dopant activation of ion implant doses of 2.8×1014 and 2.8×1015 B+/cm2 are found for temperatures ranging from 850 to 1100 °C. For samples annealed at 1100 °C for 10 s and 1000 °C for 15 min electrical characteristics of diodes are correlated with dopant profiles and penetration depth of transmission electron microscope observable defects. Radiation-enhanced diffusion, associated with the ion implant damage, is the major contributor to dopant diffusion for 10-s anneals at 1100 °C. The junction depth produced by annealing for 10 s at 1100 °C is significantly less than that produced by annealing for 15 min at 1000 °C, while the electrical characteristics of the diodes are the same.