Minority-carrier lifetime measurements of efficient GaAlAs p-n heterojunctions
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (8), 3484-3495
- https://doi.org/10.1063/1.324198
Abstract
High‐efficiency Ga1−xAlxAs p‐n heterojunctions have been fabricated by the temperature‐difference method (ηRT, 1–3% at 6650 A), and the deep levels which govern the efficiency and the lifetime have been studied by I‐V, C‐V, photocapacitance, impedance, and electroluminescence measurements. The lifetime obtained by the impedance measurement and the deep‐level distribution obtained by the C‐V measurement have a correlation. The lifetime for efficient diodes is as low as 1 μs at 80 K. The temperature dependence of the lifetime was also measured. Photocapacitance spectra show a threshold photon energy of 0.65 eV. Arsenic vacancies are proposed for these deep levels.Keywords
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