Monolithic integration of a pin photodiode and a field-effect transistor using a new fabrication technique—graded step process
- 15 February 1985
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 46 (4), 389-391
- https://doi.org/10.1063/1.95587
Abstract
A new fabrication technique of optoelectronic integrated circuit’s (OEIC’s), the graded step process, has been developed and found to improve the photolithographic yield and the overall process reproducibility. By applying this technique, a laterally integrated pin photodiode/field-effect transistor has been fabricated and shown to exhibit a high-speed response and a high sensitivity. This result indicates the potential of this process for applications to larger scale OEIC’s.Keywords
This publication has 5 references indexed in Scilit:
- Monolithic integration of an AlGaAs/GaAs multiquantum well laser and GaAs metal-semiconductor field-effect transistors on a semi-insulating GaAs substrate by molecular beam epitaxyApplied Physics Letters, 1984
- A monolithically integrated AlGaAs/GaAs p-i-n/FET Photoreceiver by MOCVDIEEE Electron Device Letters, 1983
- Monolithic integration of a photodiode and a field-effect transistor on a GaAs substrate by molecular beam epitaxyApplied Physics Letters, 1983
- High radiance InGaAsP/InP lensed LED́s for optical communication systems at 1.2-1.3 µmIEEE Journal of Quantum Electronics, 1981
- Integrated In0.53Ga0.47As p-i-n f.e.t. photoreceiverElectronics Letters, 1980