Ga0.47In0.53As/InP double-heterostructure and multiquantum well lasers grown by chemical beam epitaxy
- 1 June 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 23 (6), 936-942
- https://doi.org/10.1109/jqe.1987.1073449
Abstract
No abstract availableKeywords
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