Observation and control of the amphoteric behaviour of Si-doped InSb grown on GaAs by MBE
- 1 August 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (8), 663-676
- https://doi.org/10.1088/0268-1242/4/8/010
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- The structural and compositional characterization of InSb films prepared by metalorganic magnetron sputteringJournal of Applied Physics, 1986
- Proposed size-effect high-electron-mobility transistorSolid-State Electronics, 1986
- An MBE route towards CdTe/InSb superlatticesJournal of Vacuum Science & Technology B, 1985
- On the properties of InSb quantum wellsSolid-State Electronics, 1984
- Properties of MBE grown InSb and InSb1−xBixJournal of Vacuum Science & Technology A, 1983
- Growth of Sb and InSb by molecular-beam epitaxyJournal of Applied Physics, 1981
- RHEED Study of InSb Films Grown by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1980
- Heteroepitaxial InSb Films Grown by Molecular Beam EpitaxyPhysica Status Solidi (a), 1979
- Molecular Beam Epitaxy of InxGa1-xSb (0≦x≦1)Japanese Journal of Applied Physics, 1979
- Synthesis of stoichiometric InSb thin films by a simple molecular-beam techniqueJournal of Applied Physics, 1978