Band offsets of In0.30Ga0.70As/In0.29Al0.71As heterojunction grown on GaAs substrate
- 8 December 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (25), 2172-2173
- https://doi.org/10.1049/el:19941445
Abstract
Temperature-dependent current-voltage measurement was employed to study the band offsets of the In0.30Ga0.70As/In0.29Al0.71As heterojunction. The conduction band discontinuity was determined to be 0.71 ± 0.05 eV which corresponds to a conduction band offset to bandgap difference ratio of ~0.66. The comparison between experimental and theoretical results is presented.Keywords
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