Improved electrical mobilities from implanting InP at elevated temperatures
- 15 July 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (2), 192-194
- https://doi.org/10.1063/1.91033
Abstract
InP has been implanted with silicon to investigate the effect of implantation temperature on the postannealed electrical mobility. A significant improvement, by a factor of ∼2, occurs on implanting at 200 °C rather than at room temperature. Dislocations found after the room‐temperature but not the 200 °C implants may account for the mobility differences.Keywords
This publication has 12 references indexed in Scilit:
- Implantation and PH 3 Ambient Annealing of InPJournal of the Electrochemical Society, 1978
- N-type doping of indium phosphide by implantationSolid-State Electronics, 1978
- Comparison of Group IV and VI Doping by Implantation in GaAsJournal of the Electrochemical Society, 1975
- The role of elevated temperatures in the implantation of GaAsSolid-State Electronics, 1975
- Silicon- and selenium-ion-implanted GaAs reproducibly annealed at temperatures up to 950 °CApplied Physics Letters, 1975
- Indium PhosphideJournal of the Electrochemical Society, 1973
- Influence of implantation temperature and surface protection on tellurium implantation in GaAsApplied Physics Letters, 1972
- Ion implantation of sulphur into GaAs, GaP and ge monocrystalsRadiation Effects, 1971
- EFFICIENT DOPING OF GaAs BY Se+ ION IMPLANTATIONApplied Physics Letters, 1969
- Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling TechniqueJournal of Applied Physics, 1969