Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution
- 16 February 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 27 (2), 673-678
- https://doi.org/10.1002/pssa.2210270241
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Phase diagram, crystal growth, and band structure of InxGa1-xAsJournal of Physics and Chemistry of Solids, 1972
- Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAsJournal of Physics and Chemistry of Solids, 1971
- Theory of an Experiment for Measuring the Mobility and Density of Carriers in the Space-Charge Region of a Semiconductor SurfacePhysical Review B, 1958