Photogenerated carrier sweep-out times in strained InxGa1-xAs/InyAl1-yAs quantum well modulators
- 3 March 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (5), 405-406
- https://doi.org/10.1049/el:19940281
Abstract
The authors propose and demonstrate the use of compressively strained barriers to reduce photogenerated carrier sweep-out times in InxGa1-xAs/InyAl1-yAs multiquantum well modulators, designed for λ = 1.55µm.Keywords
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