Growth and Structure of Si Oxide Films on Si Surface

Abstract

The oxidation on Si surface were carried out by (i) the thermal oxidation in dry and wet oxidizing gases (ii) the thermal decomposition of ethyltriethoxysilane (iii) the vacuum evaporation of SiO and quartz. The growth rates of thermal oxidation on Si surface have been studied both by interference fringe and by microbalance methods. It was found that the thermal oxidation growth curves as a function of time follow the parabolic law regardless of the kinds of oxidizing gases such as saturated water vapor etc. Crystal structure of the oxide films produced by various oxidation methods have been analysed by the electron diffraction method. According to the results of the electron diffraction, optical absorption and photoresponse measurements using step etching procedures for various oxide films, the cause of the n-type conversion due to oxidation on Si surface is discussed.