Reduced Damage Generation in GaAs Implanted with Focused Be Ions
- 1 July 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (7A), L515-517
- https://doi.org/10.1143/jjap.23.l515
Abstract
Induced damage in focused-Be-ion-implanted GaAs was measured using Raman scattering spectroscopy. The amount of damage has been found to be reduced in the GaAs implanted with a Be ion beam focused to about 0.2 µm at 160 keV in comparison with the conventional unfocused case. Depth distribution profiles of the focused-ion-implant damage have shown that a considerable reduction of the damage occurs particularly at the near-surface region. This phenomenon is possibly caused by ionization annealing during high-dose-rate implantation.Keywords
This publication has 7 references indexed in Scilit:
- Focused Si Ion Implantation in GaAsJapanese Journal of Applied Physics, 1983
- The effects of ion-implantation damage on the first-order Raman spectra of GaPJournal of Applied Physics, 1983
- Recombination-Enhanced Annealing of Gamma-Ray Induced Defects in GaAs1-xPxJapanese Journal of Applied Physics, 1983
- Lateral Spreads of Be and Si in GaAs Implanted with a Maskless Ion Implantation SystemJapanese Journal of Applied Physics, 1983
- High current density Ga+ implantations into SiApplied Physics Letters, 1979
- Flux and fluence dependence of implantation disorder in GaAs substratesJournal of Applied Physics, 1978
- Recombination-enhanced annealing of the E1 and E2 defect levels in 1-MeV-electron–irradiated n-GaAsJournal of Applied Physics, 1976