Focused Si Ion Implantation in GaAs
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10A), L650
- https://doi.org/10.1143/jjap.22.l650
Abstract
A 160-keV, submicron-focused Si ion implantation in MBE-GaAs was made using a 100 kV maskless implanter with a Au–Si–Be alloy ion source. Obtained Raman spectra indicated that compared with the implantation current densities of an unfocused ion beam, the higher current density (about 104 times greater) of the focused beam resulted in less implantation-induced and residual (after annealing up to 500°C) damage. Moreover, 850°C annealing led to a higher electrical activity of focused implanted Si-ions but almost the same optical quality of conventional implantation.Keywords
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