Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy
- 31 August 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (9), 670-672
- https://doi.org/10.1063/1.98329
Abstract
Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature electron mobility of ∼5700 cm2/V s for NSi∼4×1015 and a strong exciton photoluminescence emission at 4 K. This breakthrough in MBE growth of III-V compounds allows for fabrication of (110) GaAs devices which will take advantage of the unique properties of this orientation.Keywords
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