Application of selective chemical reaction concept for controlling the properties of oxides on GaAs
- 1 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (3), 237-238
- https://doi.org/10.1063/1.90750
Abstract
We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.Keywords
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