Room-temperature electroluminescence at wavelengths of 5–7 μm from HgCdTe heterostructure diodes
- 31 October 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (18), 2314-2316
- https://doi.org/10.1063/1.112728
Abstract
Room‐temperature electroluminescence at peak wavelengths of 5–7 μm has been observed in metalorganic vapor phase epitaxy‐grown mercury cadmium telluride, fully impurity doped, heterostructure, mesa diodes. The internal quantum efficiency at low injection for 5 μm emission is around 4×10−4. Maximum output power at 295 K is 6 nW from an 80 μm diameter device (120 μW cm−2) at 50% duty cycle. The dependence of intensity on current, the emission spectra, and an infrared microscope image of the emission are presented.Keywords
This publication has 11 references indexed in Scilit:
- Uncooled InSb/In1−xAlxSb mid-infrared emitterApplied Physics Letters, 1994
- Low threshold injection laser in HgCdTeJournal of Electronic Materials, 1993
- InAsSb light emitting diodes and their applications to infra-red gas sensorsElectronics Letters, 1993
- HgCdTe infrared diode lasers grown by MBESemiconductor Science and Technology, 1993
- Radiative lifetime in semiconductors for infrared detectionInfrared Physics, 1986
- Auger suppression and negative resistance in low gap PIN diode structuresInfrared Physics, 1986
- Infra-red electroluminescence from CdxHg1−xTe diodesElectronics Letters, 1986
- Nonequilibrium devices for infra-red detectionElectronics Letters, 1985
- Characteristics of Luminescence from InSb Magneto-Infrared-Emitting DiodeJapanese Journal of Applied Physics, 1984
- Room-temperature 4.6-μm light emitting diodesApplied Physics Letters, 1980