Extended theoretical analysis of the steady-state linear behaviour of accumulation-mode, long-channel p-MOSFETs on SOI substrates

Publisher Website

31 August 1992

journal article
Published by Elsevier in Solid-State Electronics

Vol. 35 (8), 1085-1092
https://doi.org/10.1016/0038-1101(92)90009-2

Abstract

No abstract available

Keywords

STEADY STATE

This publication has 5 references indexed in Scilit:

Measurement of threshold voltages of thin-film accumulation-mode PMOS/SOI transistors
IEEE Electron Device Letters, 1991
Problems in designing thin-film accumulation-mode p-channel SOI MOSFETs for CMOS digital circuit environment
Electronics Letters, 1991
Conduction mechanisms in thin-film accumulation-mode SOI p-channel MOSFETs
IEEE Transactions on Electron Devices, 1990
A new analytical model for the two-terminal MOS capacitor on SOI substrate
IEEE Electron Device Letters, 1988
Thin-film, accumulation-mode p-channel SOI MOSFETs
Electronics Letters, 1988

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