Study of buried silicon nitride layers synthesized by ion implantation
- 1 December 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (12), 6169-6175
- https://doi.org/10.1063/1.327649
Abstract
The formation of buried layers of silicon nitride by nitrogen‐ion implantation in single‐crystal silicon is studied. He+ backscattering, x‐ray diffraction, scanning and transmission electron microscopies, and infrared absorption measurements were used for the physico‐chemical characterization; sheet resistivity determination, spreading‐resistance profile, and current‐voltage characteristics for the electrical characterization. It is shown that, for 180‐keV nitrogen ions, a fluence about 1018 N/cm2 must be implanted in order to obtain a continuous layer of silicon nitride and that annealing must be performed at 1200 °C to make it homogeneous and electrically insulating. The Si3N4 layer obtained crystallizes in the α phase and presents properties nearly similar to those of deposited layers. It is demonstrated that the conditions of implantation (energy, substrate temperature, beam intensity) play a fundamental role in the structure of the superficial silicon layer: the substrate must not be amorphized up to the surface during the implantation to obtain, after annealing, a monocrystalline surface layer suitable, for instance, for further epitaxy.Keywords
This publication has 10 references indexed in Scilit:
- High-field dark currents in thin CVD silicon nitrideJournal of Applied Physics, 1980
- Formation of thin Si3N4 films by nitrogen ion implantation into siliconThin Solid Films, 1979
- The structure of silicon nitride films. III. Oxidation of Silicon Nitride — DefectsPhysica Status Solidi (a), 1979
- The structure of silicon nitride films. II. Non-stoichiometric silicon nitridePhysica Status Solidi (a), 1979
- The structure of silicon nitride films I. Stoichiometric silicon nitridePhysica Status Solidi (a), 1978
- Properties investigation of thin silicon nitride layers synthesized by ion implantationRadiation Effects, 1978
- Electron microscopic studies of silicon layers irradiated with high doses of nitrogen ionsPhysica Status Solidi (a), 1976
- Formation of SiC and Si3N4in silicon by ion implantationRadiation Effects, 1976
- Evaluation of glancing angle X-ray diffraction and MeV 4He backscattering analyses of silicide formationThin Solid Films, 1974
- Epitaxial silicon layers grown on ion-implanted silicon nitride layersApplied Physics Letters, 1973