Direct imaging of δ-doped layers in GaAs
- 26 February 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (9), 854-856
- https://doi.org/10.1063/1.103185
Abstract
We report the direct imaging of Be δ‐doped layers in GaAs, in the concentration range (0.5–2)×1014/cm2, comparing samples grown by gas source molecular beam epitaxy (MBE) and conventional MBE. The gas source MBE δ layers are ∼15 Å wide, and at least at high concentrations, consist of clusters ∼12 Å in diameter. At 2×1014 Be atoms/cm2, the MBE δ layer is an order of magnitude wider than that grown at the same temperature by gas source MBE. Our results imply that layers with Be concentrations in excess of 1021/cm3 can be fabricated by gas source MBE.Keywords
This publication has 8 references indexed in Scilit:
- Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of siliconApplied Physics Letters, 1989
- Diffusion and drift of Si dopants in δ-doped n-type AlxGa1−xAsApplied Physics Letters, 1989
- Nonrandom doping and elastic scattering of carriers in semiconductorsApplied Physics Letters, 1989
- Spatial localization of Si in selectively δ-doped AlxGa1−xAs/GaAs heterostructures for high mobility and density realizationJournal of Crystal Growth, 1989
- Spatial localization of impurities in δ-doped GaAsApplied Physics Letters, 1988
- Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationJournal of Crystal Growth, 1987
- Direct Resolution and Identification of the Sublattices in Compound Semiconductors by High-Resolution Transmission Electron MicroscopyPhysical Review Letters, 1986
- Complex free-carrier profile synthesis by ’’atomic-plane’’ doping of MBE GaAsJournal of Applied Physics, 1980