Impurity-related photoluminescence from silicon at room temperature

Abstract

We report results for photoluminescence studies of an impurity-related defect system in 450 °C annealed Czochralski-grown silicon resulting in optical emission with a wavelength near 1.7 μm. The photoluminescence emission is found to have a significant intensity that persists to room temperature. The external quantum efficiency at 300 K is measured to be approximately 2.5×${10}^{\mathrm{-}5}$.