On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAs
- 15 July 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (2), 192-194
- https://doi.org/10.1063/1.94277
Abstract
We present a practical procedure for the evaluation of the Fermi energy in semi‐insulating (SI)GaAs from electrical measurements. This procedure makes it possible to reliably extend the determination of the major deep level (EL2) concentration, by near‐infrared absorption measurements, to SI GaAs. Employing this procedure, we showed that the EL2 concentration in Czochralski‐grown GaAs increases monotonically with increasing As/Ga ratio (throughout the conversion from SI n type to semiconducting p‐type crystals) rather than abruptly as previously proposed.Keywords
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