High-speed InP/InGaAsP/InGaAs avalanche photodiodes grown by chemical beam epitaxy
- 1 March 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (3), 496-500
- https://doi.org/10.1109/3.151
Abstract
High-performance InP/InGaAsP/InGaAs avalanche photodiodes (APDs) grown by chemical beam epitaxy are described. These APDs exhibit low dark current (less than 50 nA at 90% of breakdown), good external quantum efficiency (greater than 90% at a wavelength of 1.3 mu m), and high avalanche gain ( approximately=40). In the low-gain regime, bandwidths as high as 8 GHz have been achieved. At higher gains, a gain-bandwidth-limited response is observed; the gain-bandwidth product is 70 GHz.Keywords
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