Characteristics of Be+ and O+ or H+ co-implantation in GaAs/AlGaAs heterojunction bipolar transistor structures
- 15 January 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (2), 698-703
- https://doi.org/10.1063/1.347352
Abstract
The simultaneous formation of buried external collector and extrinsic base regions in GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures by co‐implantation of Be+ together with O+ or H+ ions is described. Oxygen implants at doses of ≥ 1012 cm−2, or proton implants at doses ≥ 1014 cm−2, followed by annealing at 500–550 °C, create fully depleted collector regions, while similar anneals lead to significant Be activation and lowered base resistance. Higher annealing temperatures improve this Be activation but restore the initial doping level in the implanted collector region. For Be+ ion doses ≤ 5≤5× 1014 cm−2 there are no defects visible by transmission electron microscopy in the HBT structure for annealing temperatures below 800 °C.Keywords
This publication has 13 references indexed in Scilit:
- Near-ideal lateral scaling in abrupt Al0.48In0.52As/In0.53Ga0.47As heterostructure bipolar transistors prepared by molecular beam epitaxyApplied Physics Letters, 1989
- Properties of molecular-beam-epitaxy-grown and O+-implanted GaAs and their application to the formation of a buried collector of an AlGaAs/GaAs heterojunction bipolar transistorJournal of Applied Physics, 1988
- Be+/P+ and Be+/As+ dual implantations into AlxGa1−xAsApplied Physics Letters, 1988
- Dual implantation of Be+ and F+ in GaAs and AlxGa1−xAsApplied Physics Letters, 1987
- Be+/O+-ion implantation in GaAs–AlGaAs heterojunctionsJournal of Applied Physics, 1986
- Collector-up HBT's fabricated by Be+and O+ion implantationsIEEE Electron Device Letters, 1986
- GaAs/(GaAl)As heterojunction bipolar transistors using a self-aligned substitutional emitter processIEEE Electron Device Letters, 1986
- Suppression of Emitter Size Effect on Current Gain in AlGaAs/GaAs HBTsJapanese Journal of Applied Physics, 1985
- Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductorsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982