Measurement of nitrogen atomic flux for RF-MBE growth of GaN and AlN on Si substrates
- 20 January 2009
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 311 (10), 2987-2991
- https://doi.org/10.1016/j.jcrysgro.2009.01.069
Abstract
No abstract availableKeywords
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