Role of oxygen and nitrogen in the titanium-silicon reaction

Abstract

X-ray diffraction and Rutherford backscattering measurements were performed on titanium silicide, titanium oxide, and titanium nitride. These compounds were formed by the heat treatment of Ti film on single-crystal Si in O2, N2, or O2+N2 ambient. The heat treatment in O2 and O2+N2 at 600 °C resulted in the formation of TiO2 and TiSi2, whereas the heat treatment in N2 resulted in the formation of TiN, Ti5Si3, and TiSi. It was also observed that Ti5Si3 and TiSi were converted to TiSi2 during the post-annealing above 800 °C and that the resistivity of TiSi2 was lowered to about 25% that of TiSi and Ti5Si3. The refractive index of TiO2 formed in O2 ambient was similar to that of rutile bulk.