Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregation
- 1 March 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 151 (1), 67-90
- https://doi.org/10.1016/0039-6028(85)90455-8
Abstract
No abstract availableKeywords
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