Antimony adsorption on silicon
- 2 February 1984
- journal article
- Published by Elsevier in Surface Science
- Vol. 137 (2-3), 397-411
- https://doi.org/10.1016/0039-6028(84)90519-3
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Molecular beam epitaxy of silicon: Effects of heavy Sb dopingJournal of Crystal Growth, 1981
- Growth of Bismuth Layers on Si(100) SurfacesJapanese Journal of Applied Physics, 1981
- An influence of the first adlayer structure on the sticking coefficient of the successive adsorption in a system of bismuth on silicon (111) surfaceSurface Science, 1981
- Si–MBE: Growth and Sb dopingJournal of Vacuum Science and Technology, 1979
- Arbitrary doping profiles produced by Sb-doped Si MBEApplied Physics Letters, 1978
- Physical methods used for the characterization of modes of epitaxial growth from the vapor phaseJournal of Crystal Growth, 1978