Short/Mid-Wave Two-Band Type-II Superlattice Infrared Heterojunction Phototransistor
- 4 December 2018
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 31 (2), 137-140
- https://doi.org/10.1109/lpt.2018.2884734
Abstract
We report on a short/mid-wave (SW/MW) two-band type-II InAs/GaSb superlattice infrared heterojunction phototransistor (HPT). The structure consists of two back-to-back HPTs for the SW and MW detections. At 77 K, the 50% cutoff wavelength of the SW and MW HPT is 2.6 and 4.2 μm, respectively. When the applied bias voltage is 1.2 V, the responsivity is 213 A/W and the current gain is 611 for the SW band, while for the MW band, the responsivity is 45.2 A/W and the current gain is 377 at bias voltage of 1.3 V. At 1.2 V, the shot noise limited detectivity D* of the SW channel and the MW channel is 1.9 × 10 11 and 1.7 × 10 9 cm · Hz 0.5 /W, respectively.Keywords
Funding Information
- National Key Research and Development Program of China (2017YFA0303400)
- National Natural Science Foundation of China (61874103, 61474106, 61774149, 61674142)
- Natural Science Foundation of Beijing Municipality (2182076, 4172061)
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