Low Voltage Operation of Nonvolatile Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS)-Field-Effect-Transistors (FETs) Using Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si Structures
- 1 April 2001
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 40 (4S)
- https://doi.org/10.1143/jjap.40.2917
Abstract
No abstract availableKeywords
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