InAs/InAs(P,Sb) quantum-well laser structure for the midwavelength infrared region
- 1 June 2000
- journal article
- Published by Institution of Engineering and Technology (IET) in IEE Proceedings - Optoelectronics
- Vol. 147 (3), 181-187
- https://doi.org/10.1049/ip-opt:20000479
Abstract
Strained InAs1−xSbx(0<xx and the nature of the barrier were theoretically predicted in a satisfactory manner under the assumption of a type-II band alignment for the InAsSb/InAs system with a valence band ratio Qv=−1.30. This hypothesis leads to a type-IIa band alignment for the arsenic-rich InAsSb/InAsP system. Starting from this result, a `W' laser structure, consisting of ten periods of InAsSb/InAsP/InAsSb/InAsPSb multiquantum wells in the active region, a broadened InAsPSb waveguide, and AlAsSb cladding layers, is proposed for room-temperature emission near 3.3 μm.Keywords
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