Laser-Assisted MOMBE Growth of GaAs Using Tri-Isobutyl Gallium
- 1 November 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (11A), L1883
- https://doi.org/10.1143/jjap.28.l1883
Abstract
Growth rate enhancement of GaAs films is studied using tri-isobutyl gallium (TIBGa) and triethylgallium (TEGa) by Ar+ laser-assisted metalorganic molecular beam epitaxy (MOMBE). TIBGa grows GaAs films at substrate temperatures approximately 50°C lower than does TEGa. The laser power required to enhance the growth rate for TIBGa is two-thirds that for TEGa. The carbon concentration of a film grown with TIBGa is one-tenth that of one grown with TEGa. Thus, the use of TIBGa has two advantages over TEGa: less laser power required to enhance growth rate, and less carbon in the film.Keywords
This publication has 8 references indexed in Scilit:
- Growth parameter dependence of background doping level in GaAs, In0.53Ga0.47As and AlxGa1−xAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Ar ion laser-assisted metalorganic molecular beam epitaxy of GaAsApplied Physics Letters, 1989
- Low temperature selective epitaxy of III–V compounds by laser assisted chemical vapor depositionJournal of Crystal Growth, 1988
- A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988
- Laser-assisted metalorganic molecular beam epitaxy of GaAsApplied Physics Letters, 1988
- Ultraviolet-assisted growth of GaAsJournal of Vacuum Science & Technology B, 1987
- Atomic-layer growth of GaAs by modulated-continuous-wave laser metal-organic vapor-phase epitaxyJournal of Vacuum Science & Technology B, 1987
- Molecular Beam Epitaxial Growth of GaAs Using Triethylgallium and As4Japanese Journal of Applied Physics, 1987