Early Stages of Oxygen Clustering and Its Influence on Electrical Behavior of Silicon
- 1 January 1982
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 67 references indexed in Scilit:
- Correlation of oxygen concentration and activated oxygen donors in silicon crystals on a microscaleApplied Physics Letters, 1981
- Influence of oxygen on silicon resistivityJournal of Applied Physics, 1980
- Oxygen striation and thermally induced microdefects in Czochralski-grown silicon crystalsApplied Physics Letters, 1980
- On the kinetics of thermal donors in oxygen-rich silicon in the range from 450 to 900°CPhysica Status Solidi (a), 1980
- Annealing behavior of the oxygen donor in siliconApplied Physics Letters, 1979
- The carrier lifetime of heat-treated silicon crystalsJournal of Electronic Materials, 1975
- Reactions of group iii acceptors with oxygen in silicon crystalsJournal of Physics and Chemistry of Solids, 1960
- The solubility of oxygen in siliconJournal of Physics and Chemistry of Solids, 1959
- Infrared Spectra of Heat Treatment Centers in SiliconPhysical Review Letters, 1958
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957