Low Subthreshold Swing HfLaO/Pentacene Organic Thin-Film Transistors
- 22 February 2008
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 29 (3), 215-217
- https://doi.org/10.1109/led.2007.915381
Abstract
We have integrated a high-kappa HfLaO dielectric into pentacene-based organic thin-film transistors. We measured good device performance, such as a low subthreshold swing of 0.078 V/dec, a threshold voltage of -1.3 V, and a field-effect mobility of 0.71cm2/ Vldrs . This occurred along with an ON-OFF state drive current ratio of 1.0 times 105, when the devices were operated at only 2 V. The performance is due to the high gate-capacitance density of 950 nF/cm2 that is given by the HfLaO dielectric, which is achieved at an equivalent oxide thickness of only 3.6 nm with a low leakage current of 5.1 times 10-7 at 2 V.Keywords
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