Assessment by i n s i t u ellipsometry of composition profiles of Ga1−xAlxAs-GaAs heterostructures x
- 1 June 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (11), 863-865
- https://doi.org/10.1063/1.92200
Abstract
Quantitive assessment of the composition profiles of Ga1‐xA1xAs‐GaAs heterostructures, which usually relies on Auger or secondary‐ion mass spectroscopy profiling techniques, can be gained by numerical analysis of in situ ellipsometry measurements. An inversion procedure that allows the computation of the refractive index profile from the ellipsometric angles measured during growth has been developed and applied to the assessment of a GaAs→ Ga1‐xA1xAs‐GaAs transition obtained in a metalorganic vapor phase epitaxy reactor.Keywords
This publication has 6 references indexed in Scilit:
- Real-time and spectroscopic ellipsometry of film growth: Application to multilayer systems in plasma and CVD processing of semiconductorsSurface Science, 1980
- Crystallization Process from Amorphous PbTiO3Japanese Journal of Applied Physics, 1980
- I n s i t u monitoring by ellipsometry of metalorganic epitaxy of GaAlAs-GaAs superlatticeJournal of Applied Physics, 1980
- Composition and refractive index of Ga1−xAlxAs determined by ellipsometryJournal of Applied Physics, 1979
- Ellipsometric assessment of (Ga, Al) As/GaAs epitaxial layers during their growth in an organometallic VPE systemJournal of Crystal Growth, 1979
- On-time determination of the composition of III-V ternary layers during VPE growthApplied Physics Letters, 1978