Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention
- 1 June 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (6L), L800-802
- https://doi.org/10.1143/jjap.44.l800
Abstract
No abstract availableKeywords
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