An ion-implanted diamond metal-insulator-semiconductor field-effect transistor
- 1 November 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (11), 602-604
- https://doi.org/10.1109/55.119211
Abstract
A p-type conducting layer has been formed in a substrate of semi-insulating natural diamond (type IIa) by boron implantation. Silicon dioxide was deposited over this layer to make an insulated-gate field-effect transistor. Saturation and pinch-off were both observed at room temperature. The transconductance was 3.9 mu S-mm/sup -1/ and the output conductance was 60 nS-mm/sup -1/. This is the first reported use of ion implantation to successfully fabricate a field-effect device in diamond.Keywords
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